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PD- 91848E
IRLMS6802
HEXFET ? Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
D
D
G
1
2
3
6
5
4
A
D
D
S
V DSS = -20V
R DS(on) = 0.050 ?
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6 ? package with its customized leadframe
produces a HEXFET ? power MOSFET with R DS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. The unique thermal design and R DS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Absolute Maximum Ratings
Micro6 ?
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
E AS
V GS
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy ?
Gate-to-Source Voltage
Junction and Storage Temperature Range
-20
-5.6
-4.5
-45
2.0
1.3
0.016
31
± 12
-55 to + 150
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Maximum Junction-to-Ambient ?
62.5
°C/W
1
01/13/03
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